C3670 2SC3670

Toshiba

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications 2SC3670 Unit: mm <.

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Datasheet Specifications

Part number: C3670
Manufacturer: Toshiba ↗
File Size: 123.24 KB
Datasheet: C3670-Toshiba.pdf
Description: 2SC3670

Applications

* Medium Power Amplifier Applications 2SC3670 Unit: mm
* High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ. ) (VCE = 1 V, IC = 2 A)
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Ab

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C3670 2SC3670 Toshiba

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