The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications Power Amplifier Applications
2SC2881
Unit: mm
• High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package
• PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1201
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
120 120
5 800 160 500
1000
150 −55 to 150
V V V mA mA
mW
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.
C2881 Datasheet
