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2SC2500
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2500
Strobe Flash Applications Medium-Power Amplifier Applications
Unit: mm
• High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB PC Tj Tstg
30 30 10 6 2
5
0.
C2500 Datasheet
