BU208A - SILICON NPN Transistor

Toshiba

Datasheet Details

. High Voltage : V CES =1500V . Low Saturation Voltage : VcE(sat)=lV (Max. ).
Fall Time : tf=0.7,us (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 02 5.OMAX, #2 1.0 MAX, tr m dxr + 0.09 0i. o -a 03 30.2x0.2.

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Published: Aug 12, 2024 |