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A1933 2SA1933

A1933 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm <.

A1933 Applications

* Industrial Applications Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.4 V (max) (IC =
* 2 A)
* High-speed switching time: tstg = 1.0 μs (typ. )
* Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni

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2SA1933 Toshiba
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