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2SK325 - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	2SK325
Manufacturer	Toshiba
File Size	130.89 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK325_Toshiba.pdf

2SK325 Product details

Features

. High Breakdown Voltage : V/gR) j)gg=450V . High Forward Transfer Admittance : | Yf s | =5S(Typ. . Low Leakage Current : lGSS =±100nA(Max. ) @ Vgs=±20V lDSS=lmA(Max. ) @ VdS=450V . Enhancement-Mode ~ : V t h=l . 5 3. 5V @ lD=lmA.

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Published: Apr 25, 2006 |