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2SK112 - Silicon N-Channel Transistor

Toshiba

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Datasheet Details

Part number	2SK112
Manufacturer	Toshiba
File Size	183.97 KB
Description	Silicon N-Channel Transistor
Datasheet	2SK112-Toshiba.pdf

2SK112 Product details

Features

. Ultra Low Noise, as well Low Source Impedance : NF=10dB(Max. ) (f=10Hz, Rg=lkQ) : NF= 2dB(Max. ) (f=lkHz, Rg=lkQ) . High Forward Transfer Admittance : lYfs I = 7~34mS . Low Gate-Source Cutoff Voltage : VGS(OFF)=-0.75V(Max. ) (2SK112-R) : VGS(OFF)=-1.20V(Max. ) (2SK112-0) . High Breakdown Voltage: V(BR)GDS=-50V Unit in mm 058MAX.

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Published: Jun 3, 2024 |