2SD870 - NPN Transistor

Toshiba

Datasheet Details

High Voltage : V CBO=1500V.
Low Saturation Voltage : v CE(sat) =5V (Max -> (IC=4A, I B=0.8A).
High Speed ; tf=1.0ys (Max. ) (I C p=4A, I B i (end)=0. 8A).
Built-in Damper Type.
Glass Passivated Collector-Base Junction. Unit in mm JZ250MAX . 0Z1.QUAX . rnr -(109 jzao-0.03 itrr.

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Published: Jul 16, 2018 |