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2SD664 - NPN Transistor

Toshiba

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Datasheet Details

Part number	2SD664
Manufacturer	Toshiba
File Size	113.48 KB
Description	NPN Transistor
Datasheet	2SD664-Toshiba.pdf

2SD664 Product details

Features

High DC Current Gain : hFE=2000(Min. )(VCE=3V, I C=3A).
Low Saturation Voltage.
V C E( S at) =1 - 5v (Max. )(I c=3A).
Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX.

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Published: Jul 16, 2018 |