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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
Unit in mm
025.OMAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
SYMBOL v CBO VCEO
RATING 100 100
UNIT V
Emitter-Base Voltage
VEBO
Collector Current
ic 30
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
EQUIVALENT CIRCUIT
IB PC
L stg
200
150
-65-150
COLLECTOR
1. BASE 2.
2SD1460 Datasheet
