. High Collector Current : Ic=7A . Low Saturation Voltage
: VCE ( sat) =0.4V(Max. ) (at I C =4A) . High Collector Power Dissipation
: Pc=40W (at Tc=25°C) . Complementary to 2SB993.
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:
SILICON NPN TRIPLE DIFFUSED TYPE
—
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage
: VCE ( sat) =0.4V(Max.) (at I C =4A) . High Collector Power Dissipation
: Pc=40W (at Tc=25°C) . Complementary to 2SB993
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX.
7.0 03.2±O.2
r 1'
'
i
i
K.
CO
d'
W d
-H
o
o H+1 r-°
to
irf
l i
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage
SYMBOL VcBO
RATING 70
UNIT V
1.4
+ 0.25 0.7 6 -Q15
2.54±Q25
W
1i
2.54±0.25
Collector-Emitter Voltage
VcEO
50 V
Emitter-Base Voltage
VEBO
5V
Collector Current
ic 7 A
Base Current Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
IB PC
T.1
1
1.5 40
150
A 1. BASE 2.
2SD1363 Datasheet
