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2SD1052A - Silicon NPN Transistor

Features

  • : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX. ) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C Unit in mm W.

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Datasheet Details

Part number 2SD1052A
Manufacturer Toshiba
File Size 110.55 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1052A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SD1052A AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . FEATURES : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C Unit in mm W MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL vCB0 vCE0 VEB0 ic RATING 50 50 UNIT V 0.7 6 . X < .2=5 4, 2.5 4 f «, % 2? Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range IB ?C stg 0.5 1.5 30 150 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) 3.
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