2SD1052A - Silicon NPN Transistor

Toshiba

Datasheet Details

: . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX. ) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C Unit in mm W.

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Published: Aug 1, 2005 |