2SC979 Datasheet - Toshiba

2SC979 SILICON NPN TRANSISTOR

2SC979 Features

* High Breakdown Voltage : VCEO=70V(2SC979A)

* Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA

* High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA

* Low Output Capacitance : Cob=3pF (Typ.)

* Complementary to 2SA499. Unit i

Datasheet Details

2SC979

116.85 KB

Silicon npn transistor.

📁 Related Datasheet

2SC979 Silicon NPN Transistor (ETC)

2SC979A SILICON NPN TRANSISTOR (Toshiba)

2SC979A Silicon NPN Transistor (ETC)

2SC97A NPN SILICON EPITAXIAL TRANSISTOR (ETC)

2SC900 Transistors (USHA)

2SC9011 AM/FM IF AMPLIFIER TRANSISTOR (USHA)

2SC9012 PNP Transistor (Promax Johnton)

PST8343 Transistors (USHA)

TAGS

2SC979 SILICON NPN TRANSISTOR Toshiba

2SC979 Distributor