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SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =2. 8W(Min.
(f=470MHz, Vcc=12.6V, Pi=0.6W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ VC c=12.6V, Pi=0.6W, f=470MHz
pa 39 MAX.
0R5MAX,
Unit in mm
—I i
M1 !
'
00.45
a
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO v CE0 v EB0 ic
PC
Ti
T stg
RATING 35 17
3.5 0.8
UNIT
7.5
175
-65-175
°C °C
1. EMITTER ^CASE^ 2. BASE 3. COLLECTOR
TOSHIBA
TC-17 TB-22C .
Weight : 3.
2SC1765 Datasheet
