2SB1016 - SILICON PNP TRANSISTOR

Toshiba

Datasheet Details

. High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max. ) . Complementary to 2SD1407 . Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage.

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Published: Jul 17, 2018 |