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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
1Q.3MAX.
FEATURES
. Low Saturation Voltage : VCE ( sat )=-0.4V(Max,) at I C=-3A
. High Speed Switching Time : t stg =l .0As(Typ. . Complementary to 2SC3299
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
SYMBOL VCBO
RATING -60
UNIT
7.0 "
03. 2 ±0.2
4
Vt-ja s M
-k J
01 -H
x'
to H
1
1.4
+ 0.25 11 a76-ai5
1
_2.54±0.25 •
1
. 1.2
2.54±C125
a a
H
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
-50 -5 -5
+ 1
!I!
1 2 31
Base Current Collector Power
Ta=25°C Tc=25 u C
IB
-1
2.0 20
1. BASE 2. COLLECTOR 3.
2SA1307 Datasheet
