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2N5302 - SILICON NPN Transistor

Toshiba

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Datasheet Details

Part number	2N5302
Manufacturer	Toshiba
File Size	111.07 KB
Description	SILICON NPN Transistor
Datasheet	2N5302-Toshiba.pdf

2N5302 Product details

Features

. Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max. ) @ I C =30A, I B =1.0A . Low Saturation Voltage: vCE(sat)=0-75V (Max. ) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max. ) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability: PC=200W (Max. ) . Complementary to 2N4399 1. BASE 2.

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Published: Aug 12, 2024 |