Datasheet4U.com

2N3906 - Silicon PNP Transistor

Toshiba

📥 Download Datasheet

2N3906 Datasheet Preview — Preview of 2N3906 PDF

datasheet Preview Page 2

Datasheet Details

Part number	2N3906
Manufacturer	Toshiba
File Size	65.50 KB
Description	Silicon PNP Transistor
Datasheet	2N3906-Toshiba.pdf

2N3906 Product details

Features

. Low Leakage Current : ICEV=-50nA(Max. ), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max. ) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ Vcb=-5V . Complementary to 2N3904 1.

📁 2N3906 Similar Datasheet

2N3906-G - General Purpose transistor (Comchip Technology)
2N3906C - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
2N3906G - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2N3906S - PNP Transistor (INCHANGE)
2N3906SC - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
2N3906U - PNP TRANSISTOR (KEC)
2N3902 - NPN Transistor (INCHANGE)
2N3903 - NPN Silicon Transistor (Semtech Corporation)

Other Datasheets by Toshiba

2N3904 - Silicon NPN Transistor
2N3905 - Silicon PNP Transistor
2N3055 - Silicon NPN Transistor
2N3713 - GENERAL PURPOSE POWER TRANSISTOR
2N3714 - GENERAL PURPOSE POWER TRANSISTOR
2N3715 - GENERAL PURPOSE POWER TRANSISTOR

Published: Jun 3, 2024 |