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SILICON PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS.
FEATURES
. High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, Ic=-3A
Low Saturation Voltage: VCE(sat)=-1.0V (Max.)
@ IC=-5A, I B=-0.5A
Unit in irnn
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VCBO
-80
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 6 C
Junction Temperature
* Storage Temperature Range
v CEO v EBO ic I CM IB
Ti L stg
-80 -7
-10
-15
-4 150
0.86 ^C~
200
-65^200
1. BASE 2. EMITTER
COLLECTOR (CASE)
EIAJ TOSHIBA
T0-204MA/TO-3 TC-3 . TB-3 2-21D1A
Weight : 12.
2N3792 Datasheet
