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2N3789 - SILICON PNP Transistor

Toshiba

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Datasheet Details

Part number	2N3789
Manufacturer	Toshiba
File Size	85.57 KB
Description	SILICON PNP Transistor
Datasheet	2N3789-Toshiba.pdf

2N3789 Product details

Features

. High Gain and Excellent hFE Linearity: hFE=15 (Min. ) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max. ) @ Ic=-4A, I B=-0.4A Unit in mm.

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Published: Aug 12, 2024 |