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TPCA8008-H - Field Effect Transistor

Features

  • tended nor warranted for use in equipment or systems that require extraordin.

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Datasheet Details

Part number TPCA8008-H
Manufacturer Toshiba
File Size 173.13 KB
Description Field Effect Transistor
Datasheet download datasheet TPCA8008-H Datasheet

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TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8008-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A High forward transfer admittance: |Yfs| = 3.3S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 S 1 4 0.6±0.1 4.25±0.
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