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TPC8123 P-Channel MOSFET

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Description

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC8123 Lithium Ion Battery Applications Power Manage.

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Features

* not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
* Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction o

Applications

* Power Management Switch Applications
* Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ. ) High forward transfer admittance: |Yfs| = 36 S (typ. ) Low leakage current: IDSS =
* 10 μA (max) (VDS =

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