Datasheet Specifications
- Part number
- TMD1414-2C
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 69.77 KB
- Datasheet
- TMD1414-2C_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER MMIC AMPLIFIER
Description
www.DataSheet4U.com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C .
Features
* n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage TemperaApplications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein isTMD1414-2C Distributors
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