Datasheet Specifications
- Part number
- TK8A60DA
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 191.28 KB
- Datasheet
- TK8A60DA-ToshibaSemiconductor.pdf
- Description
- Transistor
Description
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications * * * .
Features
* t, equipment used for autApplications
* Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum RatingsTK8A60DA Distributors
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