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TK75A06K3 Datasheet - Toshiba Semiconductor

TK75A06K3 MOSFETs

TK75A06K3 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (No

TK75A06K3-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK75A06K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

216.17 KB

Description:

Mosfets.

TK75A06K3 Distributor

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TK75A06K3 TK75A06K3 MOSFETs Toshiba Semiconductor