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TK55D10J1 N-Channel MOSFET

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Description

TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications * H.

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Applications

* High-Speed switching
* Low gate charge: Qg = 110 nC (typ. )
* Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 110 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
* Enhancement mode:

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