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TK4A50D N-Channel MOSFET

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Description

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A50D Switching Regulator Applications * * *

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Features

* RODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIA

Applications

* Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ. ) High forward transfer admittance: |Yfs| = 1.5 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (

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