Datasheet4U Logo Datasheet4U.com

TK39J60W5 - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 150 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

📥 Download Datasheet

Datasheet Details

Part number TK39J60W5
Manufacturer Toshiba
File Size 243.81 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK39J60W5 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK39J60W5 N-Channel MOSFET INCHANGE
TK39J60W N-Channel MOSFET INCHANGE
TK3904LLD03 Plastic-Encapsulate Transistors WILLAS
TK3904NND03 Plastic-Encapsulate Transistors WILLAS
TK3906LLD03 Plastic-Encapsulate Transistors WILLAS

Other Datasheets by Toshiba

Part Number Description
TK39J60W N-Channel MOSFET
TK39A60W Silicon N-Channel MOSFET
TK39N60W Silicon N-Channel MOSFET
TK39N60W5 Silicon N-Channel MOSFET
TK30A06J3A MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TK39J60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK39J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 150 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4.
Published: |