Datasheet Specifications
- Part number
- TK11A60D
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 189.43 KB
- Datasheet
- TK11A60D-ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications * *
Features
* acilities, equipment used in the aerospace inApplications
* Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum RatingTK11A60D Distributors
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