Datasheet Specifications
- Part number
- TJ9A10M3
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 199.10 KB
- Datasheet
- TJ9A10M3-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ9A10M3 1.Applications * Switching Voltage Regulators Low drain-source on-resistance: RDS(O.
Features
* (1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics DTJ9A10M3 Distributors
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