Datasheet Specifications
- Part number
- TJ70A06J3
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 229.34 KB
- Datasheet
- TJ70A06J3-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TJ70A06J3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ70A06J3 1.Applications * * * Relay Drivers DC-DC Converters Motor Drivers.
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SIS 4. AbsoluteTJ70A06J3 Distributors
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