Datasheet Details
- Part number
- TJ50S06M3L
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 254.25 KB
- Datasheet
- TJ50S06M3L-ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
TJ50S06M3L Description
MOSFETs Silicon P-Channel MOS (U-MOS) TJ50S06M3L 1.Applications * Automotive * Motor Drivers * DC-DC Converters * Sw.
TJ50S06M3L Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 10.3 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ50S06M3L
DPAK+
1: Gate 2: Drain (he
TJ50S06M3L Applications
* Automotive
* Motor Drivers
* DC-DC Converters
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