Datasheet Specifications
- Part number
- TJ100F06M3L
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 290.03 KB
- Datasheet
- TJ100F06M3L-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TJ100F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ100F06M3L 1.Applications * * * * Automotive Relay Drivers DC-DC.
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. AbsolutTJ100F06M3L Distributors
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