Datasheet Specifications
- Part number
- TG2006F
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 174.34 KB
- Datasheet
- TG2006F_ToshibaSemiconductor.pdf
- Description
- 1.9 GHz Band Power Amplifier
Description
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication .Features
* l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ. ) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.02 g (typ. ) Maximum Ratings (Ta = 25°C) CharacterApplications
* for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various oTG2006F Distributors
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