TC55VBM316AFTN - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

The TC55VBM316AFTN by Toshiba Semiconductor is a MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS. Below is the official datasheet preview.

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TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS by Toshiba Semiconductor - Datasheet Preview — Official preview page of the **TC55VBM316AFTN** MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS datasheet (Toshiba Semiconductor).

Datasheet Details

Part number	TC55VBM316AFTN
Manufacturer	Toshiba Semiconductor
File Size	258.28 KB
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55VBM316AFTN_ToshibaSemiconductor.pdf
Additional preview pages of the TC55VBM316AFTN datasheet.

TC55VBM316AFTN Product details

Description

The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits.

Features

Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
40° to 85°C Standby Current (maximum): 3.6 V 3.0 V 10 µA 5 µA.
Access Times (maximum): TC55VBM316AFTN/ASTN 40 Access Time CE1 Access Time 55.

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Published: Jul 30, 2009 |