TC55V16256FTI-12 Datasheet (Toshiba Semiconductor) - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55V16256FTI-12, MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Chip enable ( CE ) can be used to place t

TC55V16256FTI-12 Features

* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA