TB2905HQ - Low-Frequency Power Amplifier IC

Toshiba Semiconductor

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Datasheet Details

Part number	TB2905HQ
Manufacturer	Toshiba Semiconductor
File Size	323.21 KB
Description	Low-Frequency Power Amplifier IC
Datasheet	TB2905HQ_ToshibaSemiconductor.pdf

TB2905HQ Product details

Description

(Each description applies to a single channel) 1. Voltage Gain The TB2905HQ has no NF (negative feedback) pins.Therefore, the voltage gain (GV) is determined within the IC.Amplifier 2A Amplifier 1 Input Amplifier 2B www.DataSheet4U.com Figure 1 Amplifier Configuration Voltage gain of amplifier 1: GV1 = 0 dB Voltage gain of amplifiers 2A and 2B: GV2 = 20 dB Voltage gain obtained by BTL connection: GV (BTL) = 6 dB Therefore, the total voltage gain is determined by the following expression:

Features

High output power : POUT MAX (1) = 47 W (typ. ) (VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT MAX (2) = 43 W (typ. ) (VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT Pout MAX (3) = 80 W (typ. ) (VCC = 14.4V, f = 1 kHz, JEITA max, RL = 2 Ω) : POUT (1) = 29 W (typ. ) (VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω) : POUT (2) = 25 W (typ. ) (VCC = 13.2 V, f = 1 kHz, THD = 10%, RL = 4 Ω) : POUT (3) = 55 W (typ. ) (VCC = 14.4 V, f = 1 kHz, THD = 10%,RL = 2 Ω) Low distortion ratio : TH.

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Published: Aug 16, 2008 |