SSM6P49NU Datasheet - Toshiba Semiconductor

SSM6P49NU, P-Channel MOSFET

MOSFETs Silicon P-Channel MOS SSM6P49NU 1.

Features

* (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UDFN6 SSM6P49NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5

SSM6P49NU-ToshibaSemiconductor.pdf