SSM6N24TU Datasheet - Toshiba Semiconductor

SSM6N24TU, N-Channel MOSFET

SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching

Applications

* Unit: mm
* Optimum for high-density mounting in small packages Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gat

SSM6N24TU-ToshibaSemiconductor.pdf