SSM5G10TU Datasheet - Toshiba Semiconductor

SSM5G10TU Silicon Epitaxial Schottky Barrier Diode

SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch .

SSM5G10TU Features

* s, algorithms, sample application circuits, or any other referenced docum

SSM5G10TU Datasheet (906.40 KB)