SSM3K15AFS Datasheet - Toshiba Semiconductor

SSM3K15AFS, Silicon N-Channel MOSFET

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching

Applications

* 2.5 V drive
* Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 20 V Drain current DC

SSM3K15AFS-ToshibaSemiconductor.pdf