MT3S46T - Silicon NPN epitaxial planer type Transistor
Toshiba
Features
Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11.5dB (@f=2GHz)
2
Marking
3
R5
1 2
TESM JEDEC JEITA
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 40 20 100 150.
55~150 Unit V V V mA mA mW °C °C
Maximum Ratings (Ta = 25°C)
― ― 2-1B1A.
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MT3S46T TENTATIVE
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S46T
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
· · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =11.5dB (@f=2GHz)
2
Marking
3
R5
1 2
TESM JEDEC JEITA
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 40 20 100 150 −55~150 Unit V V V mA mA mW °C °C
Maximum Ratings (Ta = 25°C)
― ― 2-1B1A
TOSHIBA
Weight:0.0022g (typ.
MT3S46T Datasheet
