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MP6757 - Silicon N-Channel IGBT

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Datasheet Details

Part number MP6757
Manufacturer Toshiba
File Size 152.08 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet MP6757 Datasheet

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TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications · The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built into 1 package. · Enhancement-mode · High speed : tf = 0.35 µs (max) (IC = 25 A) : trr = 0.15 µs (max) (IF = 25 A) MP6757 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Forward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Weight: 44 g (typ.) Rating 600 ±20 25 50 25 50 72 150 −40 to 125 2500 (AC 1 minute) 1.
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