MP4212 Datasheet (Toshiba Semiconductor) - DUAL-Channel Power MOSFET

MP4212, DUAL-Channel Power MOSFET

MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (N-ch) 160 mΩ (typ.) (P-ch) High forward transfer admittance: |Yfs| = 5.0 S (t

MP4212 Features

* Capacitance

* VDS 5000 3000

* 2.0 Vth

* Tc Vth (V) Gate threshold voltage (pF)

* 1.6 1000 500 300 Common source 100 50 VGS = 0 V f = 1 MHz Tc = 25°C

* 0.3

* 1

* 3

* 10

* 30

* 100 Coss Ciss C Capacitance

* 1.2