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K3869 2SK3869

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Description

2SK3869 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm .

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Features

* nintended U

Applications

* Unit: mm
* Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ. )
* High forward transfer admittance: |Yfs| = 5.5 S (typ. )
* Low leakage current: IDSS = 100 μA (VDS = 450 V)
* Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings

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K3869 2SK3869 Toshiba Semiconductor
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