K3669 Datasheet - Toshiba Semiconductor

K3669 2SK3669

2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) www.DataSheet 4U.cEonmhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristi.

K3669-ToshibaSemiconductor.pdf