K3403 Datasheet - Toshiba Semiconductor

K3403 2SK3403

www.DataSheet4U.com 2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3403 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate.

K3403_ToshibaSemiconductor.pdf