K3126 Datasheet - Toshiba Semiconductor

K3126 2SK3126

2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drain <.

K3126_ToshibaSemiconductor.pdf