Datasheet Specifications
- Part number
- K30A06J3A
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 190.16 KB
- Datasheet
- K30A06J3A-ToshibaSemiconductor.pdf
- Description
- TK30A06J3A
Description
TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U *MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low d.
Features
* nted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limiApplications
* Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ. ) z High forward transfer admittance: |Yfs| = 34 S (typ. ) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics DK30A06J3A Distributors
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