DF3A6.8LFE Datasheet - Toshiba Semiconductor

DF3A6.8LFE Diodes

www.DataSheet4U.com DF3A6.8LFE TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.8LFE Diodes for Protecting Against ESD Unit: mm Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. Zener voltage correspond to E24 Series. Low total capacitance: CT = 6.0 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Junction temperature Storage temperature r.

DF3A6.8LFE Datasheet (115.34 KB)